may 1995 BSS138 n-channel logic level enhancement mode field effect transistor general description features _______________________________________________________________________________ absolute maximum ratings t a = 25c unless otherwise noted symbol parameter BSS138 units v dss drain-source voltage 50 v v dgr drain-gate voltage (r gs < 20k w ) 50 v v gss gate-source voltage - continuous 20 v - non repetitive (t p < 50 s) 40 i d drain current - continuous 0.22 a - pulsed 0.88 p d maximum power dissipation 0.36 w derate above 25 c 2.8 mw / c t j ,t stg operating and storage temperature range -55 to 150 c t l maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds 300 c thermal characteristics r q ja thermal resistance, junction to ambient 350 c/w BSS138 rev. a1 0.22 a, 50v. ?r ds(on ) = 3.5 w @ v gs = 10v. high density cell design for extremely low r ds(on) . rugged and relaible compact industry standard sot-23 surface mount package. d s g these n -c hannel enhancement mode field effect transistors are produced using fairchild's proprietary, high cell density, dmos technology. these products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. these products are particularly suited for low voltage, low current applications such as small servo motor control, power mosfet gate drivers, and other switching applications. ? 1997 fairchild semiconductor corporation
electrical characteristics (t a = 25c unless otherwise noted) symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 50 v i dss zero gate voltage drain current v ds = 50 v, v gs = 0 v 0.5 a t j =125c 5 a v ds = 30 v, v gs = 0 v 100 na i gssf gate - body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate - body leakage, reverse v gs = -20 v, v ds = 0 v -100 na on characteristics (note 1) v gs (th) gate threshold voltage v ds = v gs , i d = 1 ma 0.8 1.3 1.6 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 0.22 a 0.81 3.5 w v gs = 4.5 v, i d = 0.22 a 1.16 6 g fs forward transconductance v ds = 10 v, i d = 0.22 a 0.12 0.45 s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz 30 60 pf c oss output capacitance 15 25 pf c rss reverse transfer capacitance 7.5 10 pf switching ch aracteristics (note 1) t d(on) turn - on delay time v dd = 30 v, i d = 0.29 a, v gs = 10 v, r gen = 50 w 8 ns t r turn - on rise time 12 ns t d(off ) turn - off delay time 16 ns t f turn - off fall time 22 ns drain-source diode characteristics and maximum ratings i s maximum continuous source current 0.22 a i sm maximum pulse source current (note 1) 0.88 a v sd drain-source diode forward voltage v gs = 0 v, i s = 0.44 a 0.8 1.4 v note: 1. pulse test: pulse width < 300 m s, duty cycle < 2.0%. BSS138 rev. a1
BSS138 rev. a1 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 v , drain-source voltage (v) i , d r a i n - s o u r c e c u r r e n t ( a ) 4.5 4.0 3.5 3.0 2.5 v = 10v gs ds d 5.0 6.0 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 t , junction temperature (c) drain-source on-resistance v = 10v gs i = 220ma d j r , n o r m a l i z e d d s ( o n ) -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1 1.1 1.2 t , junction temperature (c) gate-source threshold voltage (v) j i = 250a d v = v ds gs v , n o r m a l i z e d t h 0 0.5 1 1.5 2 1 1.5 2 2.5 i , drain current (a) d r a i n - s o u r c e o n - r e s i s t a n c e v = 3.0v gs d r , n o r m a l i z e d d s ( o n ) 4.0 4.5 10 5.0 6.0 3.5 0 5 10 15 20 25 30 0.5 1 1.5 2 2.5 i , drain current (a) d r a i n - s o u r c e o n - r e s i s t a n c e t = 125c j 25c -55c d v = 10v gs r , n o r m a l i z e d d s ( o n ) typical electrical characteristics figure 1. on-region characteristics. figure 2. on-resistance variation wit h gate voltage and drain current. figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with drain current and temperature. figure 5. transfer characteristics. figure 6. gate threshold variation with temperature. 0.5 1 1.5 2 2.5 3 3.5 4 0 0.1 0.2 0.3 0.4 0.5 0.6 v , gate to source voltage (v) i , d r a i n c u r r e n t ( a ) v = 10v ds gs d t = 25c j 125c
BSS138 rev. a1 -50 -25 0 25 50 75 100 125 150 0.96 0.98 1 1.02 1.04 1.06 1.08 1.1 1.12 t , junction temperature (c) drain-source breakdown voltage (v) i = 250a d b v , n o r m a l i z e d dss j 0.2 0.4 0.6 0.8 1 1.2 0.001 0.01 0.1 1 v , body diode forward voltage (v) i , r e v e r s e d r a i n c u r r e n t ( a ) v = 0v gs t = 125c j sd s 25c 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 2 4 6 8 10 q , gate charge (nc) v , gate-source voltage (v) g g s i = 220ma d v = 8.0v ds 0.1 0.2 0.5 1 2 5 10 20 50 5 10 20 50 100 v , drain to source voltage (v) c a p a c i t a n c e ( p f ) ds c iss f = 1 mhz v = 0v gs c oss c rss g d s v dd r l v v in out v gs dut r gen 10% 50% 90% 10% 90% 90% 50% v in v out on off d(off) f r d(on) t t t t t t inverted 10% pulse width figure 7. breakdown voltage variation with temperature. figure 8. body diode forward voltage variation with current and temperature figure 9. capacitance characteristics. figure 10. gate charge characteristics. figure 11. switching test circuit figure 12. switching waveforms typical electrical characteristics (continued)
BSS138 rev. a1 typical electrical characteristics (continued) 0 0.3 0.6 0.9 1.2 1.5 0 0.2 0.4 0.6 0.8 i , drain current (a) g , t r a n s c o n d u c t a n c e ( s i e m e n s ) t = 25c j d fs v = 10v ds 125c 1 5 10 20 50 100 0.005 0.01 0.05 0.1 0.2 0.5 1 2 v , drain-source voltage (v) i , drain current (a) d v = 20v single pulse t = 25c a gs ds 100ms 1ms 10ms dc 1s 100us 10s rds(on) limit 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.01 0.05 0.1 0.2 0.5 1 t , time (sec) t r a n s i e n t t h e r m a l r e s i s t a n c e r(t), normalized effective 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 duty cycle, d = t /t 1 2 r (t) = r(t) * r r = 350 c/w q ja q ja q ja t - t = p * r (t) q ja a j p(pk) t 1 t 2 o figure 14. maximum safe operating area figure 15. transient thermal response curve figure 13. transconductance variation with drain current and temperature.
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